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| VHF 55 VHO 55 VKO 55 VKF 55 VGO 55 Single Phase Rectifier Bridge IdAV = 53 A VRRM = 800-1600 V Preliminary data VRSM VDSM V 800 1200 1400 1600 VRRM VDRM V 800 1200 1400 1600 Type xxx 55-08io7 xxx 55-12io7 xxx 55-14io7 xxx 55-16io7 xxx = type VGO 55 VHO 55 VHF 55 VKF 55 Symbol IdAV x IdAVM x IFRMS, ITRMS IFSM, ITSM Test Conditions TK = 85C, module module per leg TVJ = 45C; VR = 0 V TVJ = TVJM VR = 0 V I2t TVJ = 45C VR = 0 V TVJ = TVJM VR = 0 V (di/dt)cr t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine VKO 55 Maximum Ratings 53 53 41 550 600 500 550 1520 1520 1250 1250 150 A A A A A A A A2s A2s A2s A2s A/ms Features * Package with copper base plate * Isolation voltage 3000 V~ * Planar passivated chips * Low forward voltage drop * 1/4" fast-on power terminals Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability * Small and light weight Dimensions in mm (1 mm = 0.0394") TVJ = 125C repetitive, IT = 50 A f = 50 Hz, tP = 200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/2 * IdAV diG/dt = 0.3 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tp = 30 ms tp = 500 ms tp = 10 ms 500 1000 10 10 5 1 0.5 A/ms V/ms V W W W W C C C V~ V~ Nm lb.in. g (dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight -40...+125 125 -40...+125 50/60 Hz, RMS IISOL 1 mA Mounting torque t = 1 min t=1s (M5) (10-32 UNF) 2500 3000 5 15 % 44 15 % 110 Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 VHF55 VHO55 VKO55 VKF55 VGO55 Symbol ID, IR VT VT0 rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 80 A; TVJ = 25C Characteristic Values 5 1.64 0.85 11 1.5 1.6 100 200 0.2 5 450 200 2 250 0.9 0.18 1.1 0.22 16.1 7.1 50 mA V V mW V V mA mA V mA mA mA ms ms K/W K/W K/W K/W mm mm m/s2 For power-loss calculations only VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ TVJ TVJ TVJ = = = = 25C -40C 25C -40C VD = 2/3 VDRM TVJ = 25C; tP = 10 ms IG = 0.45 A; diG/dt = 0.45 A/ms TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/ms TVJ = TVJM; IT = 20 A, tP = 200 ms; di/dt = -10 A/ms typ. VR = 100 V; dv/dt = 15 V/ms; VD = 2/3 VDRM per thyristor / Diode; DC per module per thyristor / Diode; DC per module Creeping distance on surface Creepage distance in air Max. allowable acceleration (c) 2000 IXYS All rights reserved 2-2 |
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